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Micron plans to use wafer bonding and High-NA EUV for next-gen DRAM

Original title: Micron plans to use wafer bonding and High-NA EUV for next-gen DRAM

Micron rejects 4F2, intends to use wafer bonding and High-NA EUV before going 3D NAND over the next few years.

This summary reflects information published by the source and adds no independent MemoryTicker analysis.

Source: Tom's Hardware